Hydrogen-induced defects in FZ silicon crystal
نویسندگان
چکیده
منابع مشابه
Hydrogen induced optically-active defects in silicon photonic nanocavities.
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths:...
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Al-Moatasem El-Sayed,1,* Yannick Wimmer,2,† Wolfgang Goes,2,‡ Tibor Grasser,2,§ Valery V. Afanas’ev,3,‖ and Alexander L. Shluger1,¶ 1Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, Gower Street, London, WC1E 6BT, United Kingdom 2Institute for Microelectronics, Technische Universität Wien, A-1040 Vienna, Austria 3Department of Physics, Univers...
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We have studied by small angle X-ray scattering the structural evolution on the atomic and nanoscale of hydrogenated amorphous silicon prepared both by ion implantation and by plasma-enhanced chemical vapor deposition and containing a similar H content. Results show that the initial structure of both samples is homogeneous on the nanoscale. Upon annealing, low-density features on the nanometer ...
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6 Self-interstitial–hydrogen complexes in silicon and germanium . . . . . . . . 21 6.1 Experimental work on IH2 defects . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.2 The silicon self-interstitial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.3 Interstitial complexes with one hydrogen atom . . . . . . . . . . . . . . . . . . . 23 6.4 Di-hydrogenated split intersti...
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The incorporation of intrinsic point defects into a growing crystal is affected by the presence of impurities that can react with vacancies and self-interstitials. The critical value of the ratio of the growth rate, V , to the axial temperature gradient, G, ~V/G ratio! that separates the interstitial growth mode from the vacancy growth mode, is shifted by impurities, and this effect can be desc...
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ژورنال
عنوان ژورنال: Acta Crystallographica Section A Foundations of Crystallography
سال: 1981
ISSN: 0108-7673
DOI: 10.1107/s0108767381092040